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IRLZ34L - HEXFET Power MOSFET

This page provides the datasheet information for the IRLZ34L, a member of the IRLZ34S HEXFET Power MOSFET family.

Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Full PDF Text Transcription

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PD - 9.905A IRLZ34S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This www.DataSheet4U.com benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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